Display device

ABSTRACT

A display device includes a display element configured to generate a first color light, an encapsulation member on the display element and including an inorganic layer at an outermost portion thereof, a color conversion layer on the encapsulation member and including a first color conversion part configured to transmit the first color light, a second color conversion part configured to convert the first color light into a second color light, and a third color conversion part configured to convert the first color light into a third color light, and a buffer layer between the encapsulation member and the color conversion layer, wherein a difference in refractive index between the buffer layer and the inorganic layer is about 0.5 or less.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2018-0075827, filed on Jun. 29, 2018, the entirecontents of which are hereby incorporated by reference.

BACKGROUND

The present disclosure herein relates to a display device. For example,embodiments of the present disclosure relate to a display device inwhich damage to a color conversion layer is minimized or reduced, andlight extraction efficiency is improved.

Various display devices for use in multimedia devices such astelevisions, mobile phones, navigation systems, computer monitors, gamemachines, and the like are being developed. In recent years, developmentof organic light emitting diodes and the like that are capable of beingapplied to large-sized display devices is being carried out.

In order to improve light efficiency of a display device and colorreproducibility, application of a light emitting body such as quantumdots is increasing.

SUMMARY

Embodiments of the present disclosure provide a display device in whicha buffer layer of which a refractive index is controlled is applied toimprove light extraction efficiency.

An embodiment of the present disclosure provides a display deviceincluding: a display element configured to generate a first color light;an encapsulation member on the display element and including aninorganic layer at an outermost portion thereof; a color conversionlayer on the encapsulation member and including a first color conversionpart configured to transmit the first color light, a second colorconversion part configured to convert the first color light into asecond color light, and a third color conversion part configured toconvert the first color light into a third color light; and a bufferlayer between the encapsulation member and the color conversion layer,wherein a difference in refractive index between the buffer layer andthe inorganic layer is about 0.5 or less.

In an embodiment, the buffer layer may be filled between theencapsulation member and the color conversion layer.

In an embodiment, the inorganic layer may have a refractive index ofabout 1.5 to about 2.5.

In an embodiment, the buffer layer may have a refractive index of about1.5 to about 2.0.

In an embodiment, the display device may further include a color filterlayer on the color conversion layer.

In an embodiment, the color filter layer may include: a first colorfilter part overlapping the first color conversion part and configuredto transmit the first color light; a second color filter partoverlapping the second color conversion part and configured to block thefirst color light and transmit the second color light; and a third colorfilter part overlapping the third color conversion part and configuredto block the first color light and transmit the third color light.

In an embodiment, the display device may further include a capping layerin at least one selected from between the color conversion layer and thebuffer layer, and between the color conversion layer and the colorfilter layer.

In an embodiment, the buffer layer may include: a bottom surfacecontacting the encapsulation member; and a top surface adjacent to thecolor conversion layer and including an uneven pattern.

In an embodiment, an internal space may be defined between the bufferlayer and the color conversion layer.

In an embodiment, the buffer layer may contact at least one of thesecond color conversion part or the third color conversion part.

In an embodiment, the color conversion layer may include a quantum dot.

In an embodiment, the first color light may include a light having awavelength region of about 410 nm to about 480 nm, the second colorlight may include a light having a wavelength region of about 500 nm toabout 570 nm, and the third color light may include a light having awavelength region of about 625 nm to about 675 nm.

In an embodiment, the display device may further include alow-refractive index layer between the color conversion layer and thecolor filter layer, the low-refractive index layer having a refractiveindex of about 1.1 to about 1.5.

In an embodiment of the present disclosure, a display device includes: adisplay element; a color conversion layer on the display element andincluding first to third color conversion parts each of which includes aquantum dot and that are located to be spaced apart from each other; anencapsulation member between the display element and the colorconversion layer including an inorganic layer contacting the colorconversion layer; and a buffer layer between the encapsulation memberand the color conversion layer having a refractive index of about 1.5 toabout 2.0.

In an embodiment, the second color conversion part may have a thicknessgreater than each of those of the first color conversion part and thethird color conversion part, and the third color conversion part mayhave a thickness greater than that of the first conversion part in aplane.

In an embodiment, the second color conversion part may have an areagreater than each of those of the first color conversion part and thethird color conversion part, and the third color conversion part mayhave an area greater than that of the first conversion part in a plane.

In an embodiment, a difference in refractive index between the bufferlayer and the inorganic layer may be about 0.5 or less.

In an embodiment, the display device may further include: a firstcapping layer on a top surface of the color conversion layer; and asecond capping layer between the buffer layer and the color conversionlayer.

In an embodiment, the buffer layer may include: a bottom surfacecontacting the encapsulation member; and a top surface adjacent to thecolor conversion layer, the top surface having an uneven pattern,wherein an internal space may be defined between the buffer layer andthe color conversion layer.

In an embodiment, the internal space may be defined between each of thebuffer layer and the first color conversion part and between the bufferlayer and the third color conversion part.

In an embodiment of the present disclosure, a display device includes: adisplay element including first to third pixel regions adjacent to eachother in a plane, the display element including a first organic lightemitting diode overlapping the first pixel region and including a lightemitting layer, a second organic light emitting diode overlapping thesecond pixel region and including a light emitting layer, and a thirdorganic light emitting diode overlapping the third pixel region andincluding a light emitting layer; an encapsulation member on the displayelement and including an inorganic layer at the outermost portionthereof; a color conversion layer on the encapsulation member andincluding a first color conversion part located to correspond to thefirst organic light emitting diode, a second color conversion partlocated to correspond to the second organic light emitting diode, and athird color conversion part located to correspond to the third organiclight emitting diode; a color filter layer on the color conversionlayer; a buffer layer between the encapsulation member and the colorconversion layer, wherein a difference in refractive index between thebuffer layer and the inorganic layer is about 0.5 or less; alow-refractive index layer between the color conversion layer and thecolor filter layer; a first capping layer between the color conversionlayer rand the low-refractive index layer; and a second capping layerbetween the buffer layer and the color conversion layer, wherein thelight emitting layers of the first organic light emitting diode, thesecond organic light emitting diode, and the third organic lightemitting diode may be integrated with each other.

BRIEF DESCRIPTION OF THE FIGURES

The accompanying drawings are included to provide a furtherunderstanding of the subject matter of the present disclosure, and areincorporated in and constitute a part of the present disclosure. Thedrawings illustrate exemplary embodiments of the present disclosure and,together with the description, serve to explain principles of thepresent disclosure. In the drawings:

FIG. 1 is a perspective view of a display device according to anembodiment of the present disclosure;

FIG. 2 is a plan view of the display device according to an embodimentof the present disclosure;

FIG. 3 is a cross-sectional view taken along line I-I′ of FIG. 2;

FIG. 4A is a cross-sectional view illustrating an optical path of adisplay device according to a comparison example of the presentdisclosure;

FIG. 4B is a cross-sectional view illustrating an optical path of thedisplay device according to an embodiment of the present disclosure;

FIG. 5 is a graph illustrating light conversion rates of the displaydevices according to a comparison example and an embodiment of thepresent disclosure;

FIG. 6 is an equivalent circuit diagram of a pixel according to anembodiment of the present disclosure;

FIG. 7 is a cross-sectional view illustrating a portion of the displaydevice according to an embodiment of the present disclosure;

FIG. 8 is a cross-sectional view of the display device according to anembodiment of the present disclosure;

FIG. 9 is a plan view of the display device according to an embodimentof the present disclosure;

FIG. 10 is a cross-sectional view taken along line II-II' of FIG. 9;

FIG. 11 is a cross-sectional view of a display device according to anembodiment of the present disclosure;

FIG. 12 is a cross-sectional view of a display device according to anembodiment of the present disclosure;

FIG. 13 is a cross-sectional view of a display device according to anembodiment of the present disclosure; and

FIG. 14 is a cross-sectional view of the display device according to anembodiment of the present disclosure.

DETAILED DESCRIPTION

Example embodiments of the present disclosure will be described below inmore detail with reference to the accompanying drawings. Because thepresent disclosure may encompass diverse modified embodiments, exampleembodiments are illustrated in the drawings and are described in thedetailed description of the present disclosure. However, this does notlimit the present disclosure to the example embodiments and it should beunderstood that the present disclosure covers all the modifications,equivalents, and replacements within the spirit and scope of the presentdisclosure.

Like reference numerals refer to like elements throughout. In thedrawings, the dimensions and size of each structure may be exaggerated,omitted, or schematically illustrated for convenience in description andclarity. It will be understood that although the terms such as “first”and “second” are used herein to describe various elements, theseelements should not be limited by these terms. The terms are only usedto distinguish one component from other components. For example, a firstelement referred to as a first element in one embodiment can be referredto as a second element in another embodiment without departing from thescope of the appended claims. The terms of a singular form may includeplural forms unless explicitly described to the contrary.

As used herein, the meaning of the terms “include” and “comprise”includes the stated property, region, fixed number, step, process,element and/or component but does not exclude other properties, regions,fixed numbers, steps, processes, elements and/or components.

In the present disclosure, it will be understood that when a layer (orfilm), a region, or a plate is referred to as being “on” or “on an upperportion of” another layer, region, or plate, it can be directly on theother layer, region, or plate, or intervening layers, regions, or platesmay also be present. On the contrary to this, it will be understood thatwhen a layer, a film, a region, or a plate is referred to as being“under or “on a lower portion of” another layer, region, or plate, itcan be directly under the other layer (or film), region, or plate, orintervening layers, regions, or plates may also be present. Also, in thepresent disclosure, a structure in which a layer, a film, a region, or aplate is “on” another layer, film, region, or plate may include astructure in which the layer, film, region, or plate is on a lowerportion and/or an upper portion of another layer, film, region, orplate.

In the present disclosure, “direct contact” may mean that there is nolayer, film, region, plate, or the like between a portion of the layer,the layer, the region, the plate, or the like and the other portion. Forexample, “direct contact” may mean being located without using anadditional member such and an adhesion member between two layers or twomembers.

Hereinafter, a display device according to an embodiment of the presentdisclosure will be described with reference to the accompanyingdrawings.

FIG. 1 is a perspective view of a display device according to anembodiment of the present disclosure. FIG. 2 is a plan view of thedisplay device according to an embodiment of the present disclosure, andFIG. 3 is a cross-sectional view taken along line I-I′ of FIG. 2.

Referring to FIG. 1, a display device DD includes a display element, anencapsulation member TFE on the electrode element, a buffer layer BFL onthe encapsulation member TFE, and a color conversion layer CCL on thebuffer layer BFL. The buffer layer BFL may protect the color conversionlayer CCL to improve light extraction efficiency of the display element.

The display element according to present disclosure may be an organiclight emitting diode OLED as a self-luminous element, and the organiclight emitting diode OLED may generate a first color light. For example,the first color light provided by the organic light emitting diode OLEDmay be blue light. The blue light may include a light having awavelength region of about 410 nm to about 480 nm (e.g., a wavelength ina range of about 410 nm to about 480 nm).

The display device DD may further include a first substrate SUB1 and asecond substrate SUB2, which are located to face each other. The organiclight emitting diode OLED may be on the second substrate SUB2.

Referring to FIG. 2, the display device DD according to an embodimentmay include a display area on which an image may be displayed and anon-display area NDA on which an image is not displayed. The non-displayarea NDA may be located outside the display area DA.

The display device DD may have a rectangular shape having a planedefined by an axis in a first direction DR1 and an axis in a seconddirection DR2. The display device DD may also have a thickness in athird direction DR3 perpendicular to the first direction DR1 and thesecond direction DR2. However, the present disclosure is not limitedthereto. For example, the display area DA and the non-display area NDAmay be relatively designed in shape.

Although the display device DD includes a planar display surface in FIG.2, the present disclosure is not limited thereto. The display device DDaccording to an embodiment may include a curved display surface or asolid display surface. The solid display surface may include a pluralityof display areas that indicate different directions. For example, thesolid display surface may include a polygonal column-type displaysurface.

The display area DA may include a plurality pixel areas Pxa-B, Pxa-G,and Pxa-R. For example, the pixel areas Pxa-B, Pxa-G, and Pxa-R may bedefined by a plurality of gate lines and a plurality of data lines. Thepixel areas Pxa-B, Pxa-G, and Pxa-R may be arranged in a matrix form. Apixel that will be described below may be on each of the pixel areasPxa-B, Pxa-G, and Pxa-R.

The display device DD may include a first pixel area, a second pixelarea, and a third pixel area, which are adjacent to each other in theplane and emit light having wavelengths different from each other. In anembodiment, the first pixel area may be a blue pixel area Pxa-B, thesecond pixel area may be a green pixel area Pxa-G, and the third pixelarea may be a red pixel area Pxa-R. For example, in an embodiment, thedisplay device DD may include the blue pixel area Pxa-B, the green pixelarea Pxa-G, and the red pixel area Pxa-R. The blue pixel area Pxa-B maybe a blue light emitting area that is configured to emit blue light. Thegreen pixel area Pxa-G and the red pixel area Pxa-R may be a green lightemitting area configured to emit green light and a red light emittingarea configured to emit red light, respectively.

An arrangement structure of the pixel areas illustrated in FIG. 2 may becalled a stripe structure, but the present disclosure is not limited tothe arrangement structure of the pixel areas. For example, the pixelareas may have a PenTile structure.

In an embodiment, the display device DD may be a rigid display device.However, the present disclosure is not limited thereto. For example, thedisplay device DD according to embodiments of the present disclosure maybe a flexible display device.

Referring to FIG. 3, the display device DD according to an embodimentmay include a first substrate SUB1 and a second substrate SUB2. Each ofthe first substrate SUB1 and the second substrate SUB2 may include apolymer substrate, a plastic substrate, a glass substrate, and/or aquartz substrate. Each of the first substrate SUB1 and the secondsubstrate SUB2 may include a transparent insulation substrate. Each ofthe first substrate SUB1 and the second substrate SUB2 may be rigid.Each of the first substrate SUB1 and the second substrate SUB2 may beflexible.

The display device DD may include a circuit layer CL on the secondsubstrate SUB2. The circuit layer CL will be described herein in moredetail with reference to FIG. 7.

The display device DD according to an embodiment may include a firstorganic light emitting diode overlapping the first pixel area Rxa-B, asecond organic light emitting diode overlapping the second pixel areaRxa-G, and a third organic light emitting diode overlapping the thirdpixel area Rxa-R.

Each of the first to third organic light emitting diodes OLEDs mayinclude a first electrode EL1, a hole transport region HTR, a lightemitting layer EML, an electron transport region ETR, and a secondelectrode EL2.

The light emitting layers EML of the first to third organic lightemitting diodes may have an integrated shape and be commonly located onthe pixel areas Pxa-B, Pxa-G, and Pxa-R and a peripheral area NPxa. Thelight emitting layer EML may generate the first color light, e.g., theblue light.

The encapsulation member TFE may be on the organic light emitting diodeOLED to seal the organic light emitting diode OLED. The encapsulationmember TFE may include an inorganic layer IL that directly contacts thebuffer layer BFL and is located at the outermost position adjacent tothe color conversion layer CCL. Also, the encapsulation member TFE mayfurther include an organic layer OL or may have a structure in which theinorganic layer IL and the organic layer OL are alternately repeatedlyarranged. The encapsulation member TFE may protect the organic lightemitting diode OLED against moisture/oxygen and also protect the organiclight emitting diode OLED against foreign substances such as dustparticles.

According to an embodiment, the inorganic layer IL may have a refractiveindex of about 1.5 to about 2.5. According to another embodiment, theinorganic layer IL may have a refractive index of about 1.5 to about2.5, about 1.6 to about 2.4, or about 1.8 to about 2.3. The inorganiclayer IL is not particularly limited as long as the material satisfiesthe refractive index. For example, the inorganic layer IL may be made ofa material including silicon nitride (SiN_(x)), silicon oxynitride(SiO_(y)N_(x)), silicon oxide (SiO_(y)), titanium oxide (TiO_(y)),and/or aluminum oxide (AlO_(y)).

The organic layer OL may include acrylate-based organic materials, butis not particularly limited thereto. The inorganic layer IL may beformed through a deposition method or the like, and the organic layer OLmay be formed through a deposition method, a coating method, or thelike.

The color conversion layer CCL may include a first color conversion partCCP1 configured to transmit the first color light, a second colorconversion part CCP2 configured to convert the first color light into asecond color light, and a third color conversion part CCP3 configured toconvert the first color light into a third color light. For example, thesecond color light may be green light, and the green light may include alight having a wavelength region of about 500 nm to about 570 nm (e.g.,a wavelength in a range of about 500 nm to about 570 nm). The thirdcolor light may be red light, and the red light may include a lighthaving a wavelength region of about 625 nm to about 675 nm (e.g., awavelength in a range of about 625 nm to about 675 nm).

The color conversion layer CCL may include the plurality of colorconversion parts CCP1, CCP2, and CCP3. According to an embodiment, thefirst to third color conversion parts CCP1, CCP2, and CCP3 may belocated to be spaced apart from each other in a plane. Referring to FIG.3, the first to third color conversion parts CCP1, CCP2, and CCP3 may bearranged to be spaced apart from each other in the plane defined by theaxis in the first direction and the axis in the third direction DR3.

The first color conversion part CCP1 may be located to correspond to thefirst pixel area Pxa-B, the second color conversion part CCP2 may belocated to correspond to the second pixel area Pxa-G, and the thirdcolor conversion part CCP3 may be located to correspond to the thirdpixel area Pxa-R.

According to an embodiment, the color conversion layer CCL may include alight emitting body, and the light emitting body may include a quantumdot. The quantum dot may be selected from Group II-VI compounds, GroupIII-V compounds, Group IV-VI compounds, Group IV elements, Group IVcompounds, and a combination thereof.

The Group II-VI compounds may be selected from binary element compoundsselected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO,HgS, HgSe, HgTe, MgSe, MgS, and a combination thereof, ternary elementcompounds selected from the group consisting of AgInS, CuInS, CdSeS,CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS,CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe,MgZnS, and a combination thereof, and quaternary element compoundsselected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe,CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and acombination thereof.

The Group III-V compounds may be selected from binary element compoundsselected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP,AlAs, AlSb, InN, InP, InAs, InSb, and a combination thereof, ternaryelement compounds selected from the group consisting of GaNP, GaNAs,GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs,InNSb, InPAs, InPSb, GaAlNP, and a combination thereof, and quaternaryelement compounds selected form the group consisting of GaAlNAs,GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb,InAINP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and a combination thereof.The Group IV-VI compounds may be selected from binary element compoundsselected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe,and a combination thereof, ternary element compounds selected from thegroup consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS,SnPbSe, SnPbTe, and a combination thereof, and quaternary elementcompounds selected form the group consisting of SnPbSSe, SnPbSeTe,SnPbSTe, and a combination thereof. The Group IV elements may beselected from the group consisting of Si, Ge, and a combination thereof.The Group IV compounds may be binary element compounds selected from thegroup consisting of SiC, SiGe, and a combination thereof.

Here, the binary element compounds, the ternary element compounds, andthe quaternary element compounds may exist in the particle at a uniform(e.g., substantially uniform) concentration or exist in the particle ina state in which a concentration distribution is divided into partiallydifferent states.

The quantum dot may have a core shell structure including a shellsurrounding a core. In some embodiments, the quantum dot may have acore/shell structure in which one quantum dot surrounds the otherquantum dot. An interface between the core and the shell may have aconcentration gradient in which an element existing in the shell has aconcentration that gradually decreases toward a center of the quantumdot.

The quantum dot may have a particle having a size of a nano scale. Thequantum dot may have a full width of half maximum (FWHM) of an emissionwavelength spectrum of about 45 nm or less, for example, about 40 nm orless, or about 30 nm or less. In this range, color purity and colorreproducibility may be improved. Also, light emitted through the quantumdot may be emitted in all directions to improve an optical viewingangle.

Also, the quantum dot may have any suitable shape that is generally usedin the art, and is not specifically limited to any particular shape. Insome embodiments, the quantum dot may have a spherical shape, apyramidal shape, a multi-arm shape, a cubic nanoparticle shape, ananotube shape, a nanowire shape, a nanofiber shape, a nanoplateparticle shape, and/or the like.

The light emitted from the quantum dot may vary in color according to aparticle size of the quantum dot. For example, the quantum dot providedin the second color conversion part CCP2 may have a particle size lessthan that of the quantum dot provided in the third color conversion partCCP3. Here, the quantum dot provided in the second color conversion partCCP2 may emit light having a wavelength shorter than that of lightemitted from the quantum dot provided in the third color conversion partCCP3.

Although the first to third color conversion parts CCP1, CCP2, and CCP3have the same (e.g., substantially the same) area and/or thickness inthe drawings, the present disclosure is not limited thereto. Forexample, the first to third color conversion parts CCP1, CCP2, and CCP3may have different areas and/or thicknesses.

In some embodiments, a light blocking part BM may be between the firstand second color conversion parts CCP1 and CCP2, which are spaced apartfrom each other, and/or between the second and third color conversionparts CCP2 and CCP3, which are spaced apart from each other.

In an embodiment, the display device may include a color filter layerCFL. The color filter layer CFL may be on the color conversion layer CCLand include first to third color filter parts B-CFP, G-CFP, and R-CFPand the light blocking part BM.

In an embodiment, the first to third color filter parts B-CFP, G-CFP,and R-CFP may be located to be spaced apart from each other in theplane. Referring to FIG. 3, the first to third color filter parts B-CFP,G-CFP, and R-CFP may be arranged to be spaced apart from each other inthe plane defined by the axis in the first direction and the axis in thethird direction DR3.

The first color filter part B-CFP may be located to correspond to thefirst color conversion part CCP1 and be configured to transmit the lighthaving the first color. The second color filter part G-CFP may belocated to correspond to the second color conversion part CCP2 and beconfigured to block the light having the first color and transmit thelight having the second color. The third color filter part R-CFP may belocated to correspond to the third color conversion part CCP3 and beconfigured to block the light having the first color and transmit thelight having the third color. The display device DD may include a colorfilter layer CFL to effectively reduce reflection of external light.

The light blocking part BM may be provided to correspond to a peripheralarea NPxa. The light blocking part BM may contain an organic lightblocking material or an inorganic light blocking material including ablack pigment or dye. The light blocking part BM may prevent or reduceoccurrence of a light leakage phenomenon and may distinguish a boundarybetween the color filter parts adjacent to each other. At least aportion of the light blocking part BM may be located to overlap thecolor filter part that is adjacent thereto. For example, at least aportion of the light blocking part BM may be located to overlap thecolor filter parts adjacent thereto in a thickness direction in theplane defined by the axis in the first direction DR1 and the axis in thethird direction DR3. However, the present disclosure is not limitedthereto.

Although the light blocking part BM includes the color filter layer CFLin an embodiment of the present disclosure, the present disclosure isnot limited thereto.

The buffer layer BFL is between the encapsulation member TFE and thecolor conversion layer CCL. The buffer layer BFL may be between theencapsulation member TFE and the color conversion layer CCL to preventor reduce contact of the color conversion layer CCL with theencapsulation member TFE and to improve light extraction efficiency ofthe display device DD.

In an embodiment, the buffer layer BFL may be filled between theencapsulation member TFE and the color conversion layer CCL. The fillingbetween the encapsulation member TFE and the color conversion layer CCLmeans that a space between the encapsulation member TFE and the colorconversion layer CCL is completely filled with the buffer layer BFL sothat an internal space is not generated between the encapsulation memberTFE and the color conversion layer CCL, and the buffer layer BFLcontacts all of the encapsulation member TFE and the first to thirdcolor conversion parts CCP1, CCP2, and CCP3 of the color conversionlayer CCL.

The buffer layer BFL may prevent or reduce oxidation of the quantum dotprovided in the color conversion layer CCL. Thus, the display device DDmay maintain its light extraction efficiency without it being greatlydiminished.

In an embodiment, the buffer layer BFL may be directly on the inorganiclayer IL located at the outermost portion of the encapsulation member. Adifference in refractive index between the buffer layer BFL and theinorganic layer IL may be about 0.5 or less. In some embodiments, thebuffer layer BFL may have a refractive index of about 1.5 to about 2.0.The buffer layer BFL may include an inorganic binder, an organic binder,or a liquid crystal compound so as to satisfy the refractive indexhaving the above-described range, but the present disclosure is notlimited thereto.

Also, the buffer layer BFL may further include a leveling agent. In thiscase, the buffer layer BFL may have low conformality and be flat evenwhen the thicknesses and/or areas of the first to third color conversionparts CCP1, CCP2, and CCP3 of the color conversion layer CCL aredifferent from each other. The buffer layer BFL may be formed by an onedrop fill (ODF) manner in which a buffer layer material is injected intoone substrate before polymerization, and then, the two substrates arepolymerized and attached to each other.

The refractive index of the buffer layer BFL will be described herein inmore detail with reference to FIGS. 4A-4B.

FIG. 4A is a cross-sectional view illustrating an optical path of adisplay device according to a comparison example. FIG. 4B is across-sectional view illustrating an optical path of the display deviceaccording to an embodiment of the present disclosure. FIG. 5 is a graphillustrating light conversion rates of the display devices according toa comparison example and an embodiment of the present disclosure.

Referring to FIG. 4A, unlike this embodiment, the buffer layer BFL isnot provided between the inorganic layer IL of the encapsulation memberTFE and the color conversion layer CCL, and also, the internal space ARdoes exist. The internal space may be in a vacuum state and have arefractive index of about 1.0. Thus, a difference in refractive indexbetween the inorganic layer IL and the internal space AR is relativelylarge.

When light traveling from the inorganic layer IL toward the colorconversion layer CCL is defined as incident light, an angle between avirtual line perpendicular to an interface between the inorganic layerIL and the internal space AR and the incident light may be defined as anincident angle. When the incident angle is greater than a totalreflection angle, 100% of the incident light is reflected at theinterface between the inorganic layer IL and the internal space AR. Adegree of the total reflection angle depends on Snell's law.

When the display device does not comprise buffer layer BFL, because adifference in refractive index between the inorganic layer IL and theinternal space AR is relatively large, the total reflection angle isrelatively small, and a portion of the incident light having an incidentangle θ_(c) greater than the total reflection angle is totally reflectedat the interface between the inorganic layer IL and the internal spaceAR and thus does not reach the color conversion layer CCL. Also, theremaining portion of the incident light has an incident angle θ_(r) lessthan the total reflection angle and thus is not totally reflected at theinterface between the inorganic layer IL and the internal space AR.However, the incident light is greatly refracted due to the differencein refractive index between the inorganic layer IL and the internalspace AR and is not transmitted to a front surface of the colorconversion layer CCL. Thus, when the buffer layer BFL is not providedbetween the inorganic layer IL and the color conversion layer CCL, butonly the internal space AR exists, an amount of light transmitted to thecolor conversion layer CCL may be reduced to deteriorate the lightextraction efficiency.

Referring to FIG. 4B, according to this embodiment, the buffer layer BFLis between the inorganic layer IL and the color conversion layer CCL.Because a difference in refractive index between the buffer layer BFLand the inorganic layer IL is about 0.5 or less, the total reflectionangle may be relatively large. Thus, unlike that a portion of theincident light is totally reflected to travel as indicated by a dottedline of FIG. 4A, because the incident angle θ_(c) is less than the totalreflection angle, the incident angle θ_(c) is not totally reflected atthe interface between the inorganic layer IL and the buffer layer BFLbut is transmitted to the side surface. Also, remaining incident lighthaving the incident angle θ_(r) that is greatly reflected to travel asindicated by the dotted line of FIG. 4A may be refracted at a smallerangle to pass through the buffer layer BFL. Then, the incident lightreaches the interface between the buffer layer BFL and the colorconversion layer CCL and then is reflected again to be incident into thefront surface of the color conversion layer CCL.

Thus, the display device DD according to an embodiment may include thebuffer layer BFL, which is controlled in refractive index, to inducelight collection into the color conversion layer CCL, thereby improvingthe light extraction efficiency.

FIG. 5 is a graph illustrating results obtained by comparing retentionrates in the light conversion efficiency according to a comparisonexample and an embodiment of the present disclosure. To confirm aneffect when the buffer layer BFL is provided, a laminate in which thesubstrate, the color conversion layer, and the buffer layer aresequentially laminated is provided for an embodiment, and a laminate inwhich the substrate and the color conversion layer are sequentiallylaminated is provided for a comparison example. Embodiment 1-1 andComparison Example 1-1 represent retention rates measured in the thirdlight conversion part, and Embodiment 1-2 and Comparison Example 1-2represent retention rates measured in the second color conversion part.A manufacturing process is largely divided into three steps, and aretention rate (%) is calculated by measuring light conversionefficiency just after each step. Step 1 is a process of thermallytreating each laminate at a temperature of 180° C. for 30 minutes, Step2 is a process of forming an inorganic layer, and Step 3 is a process ofthermally treating each laminate at a temperature of 230° C. for 30minutes.

In FIG. 5, the retention rate (%) is a value obtained by measuring thelight conversion efficiency of each laminate before Step 1 is performedand then converting a degree of maintaining initial light conversionefficiency into a percent (%) value when the above-described lightconversion efficiency is referred to as the initial light conversionefficiency. For example, when the initial light conversion efficiency isabout 24%, and the light conversion efficiency measured in Step 1 isabout 20%, the retention rate in Step 1 is about 83%.

In Comparison Example 1-1, the retention rate is lowered to values of88%→80%→80%, i.e., lowered by about 8% when compared to the initialretention rate. On the other hand, in Embodiment 1-1, the retention rateis lowered to values of 88%→81%→87%, i.e., lowered by only about 1% whencompared to the initial retention rate. In Comparison Example 1-2, theretention rate is lowered to values of 95%→87%→83%, i.e., lowered byabout 12% when compared to the initial retention rate. On the otherhand, in Embodiment 1-2, the retention rate is lowered to values of95%→89%→93%, i.e., lowered by only about 2% when compared to the initialretention rate.

For example, when the buffer layer BFL is between the inorganic layer ILand the color conversion layer CCL in the display device DD, all of thecolor conversion layers CCL, which are located to be spaced apart fromeach other, may be effectively protected. Thus, even though the thermalprocess at a high temperature is performed, a high level of the lightconversion efficiency may be continuously maintained.

FIG. 6 is an equivalent circuit diagram of a pixel according to anembodiment of the present disclosure. FIG. 7 is a cross-sectional viewillustrating a portion of the display device according to an embodimentof the present disclosure.

FIG. 6 illustrates one scan line GL, one data line DL, a power line PL,and a pixel PX coupled to (e.g., connected to) the scan line GL, thedata line DL, and the power line PL. The configuration of the pixel PXmay not be limited to that of FIG. 6 but may be deformable.

An organic light emitting diode OLED may be a top emission-type diode ora bottom emission-type diode. The pixel PX includes a first transistorT1 (or a switching transistor), a second transistor T2 (or a drivingtransistor), and a capacitor Cst as the pixel driving circuit drivingthe organic light emitting diode OLED. A first power voltage ELVDD isprovided to the second transistor T2, and a second power voltage ELVSSis provided to the organic light emitting diode OLED. The second powervoltage ELVSS may be less than the first power voltage ELVDD.

The first transistor T1 outputs a scan signal applied to the data lineDL in response to a scanning signal applied to the gate line GL. Thecapacitor Cst charges a voltage to correspond to the data signalreceived from the first transistor T1. The second transistor T2 iscoupled to (e.g., connected to) the organic light emitting diode OLED.The second transistor T2 controls driving current flowing through theorganic light emitting diode OLED to correspond to an amount of chargesstored in the capacitor Cst.

The equivalent circuit is merely an example, and thus, the presentdisclosure is not limited thereto. The pixel PX may further include aplurality of transistors and may include a larger number of capacitors.The organic light emitting diode OLED may be coupled between (e.g.,connected between) the power line PL and the second transistor T2.

FIG. 7 is a cross-sectional view corresponding to one pixel. The circuitlayer CL, the organic light emitting diode OLED, and the encapsulationmember TFE are sequentially on the second substrate layer SUB2.

In an embodiment, the circuit layer CL may include a first insulationlayer IS1, a second insulation layer IS2, and a third insulation layerIS3. Each of the first insulation layer IS1 and the second insulationlayer IS2 may include an inorganic material, but the kind thereof is notparticularly limited. The third insulation layer IS3 may include anorganic material, but the kind thereof is not particularly limited. Insome embodiments, a barrier layer may be additionally on the secondsubstrate SUB2. Each of the first insulation layer IS1, the secondinsulation layer IS2, and the third insulation layer IS3 may have asingle layer or multilayered structure.

The first transistor T1 includes a semiconductor pattern SP, a controlelectrode GE, an input electrode SE, and an output electrode DE. Thesemiconductor pattern SP is on the second substrate SUB2. Thesemiconductor pattern SP may include a crystalline semiconductormaterial or amorphous silicon.

The first insulation layer IS1 is on the second substrate SUB2. Thefirst insulation layer IS1 may commonly overlap the display area DA andthe non-display area NDA and cover the semiconductor pattern SP.

The control electrode GE is on the first insulation layer IS1. Thecontrol electrode GE overlaps the semiconductor pattern SP. The controlelectrode GE may be manufactured through the same photolithographyprocess as the scan line GL (see FIG. 6).

The second insulation layer IS2 is on the first insulation layer IS1.The second insulation layer IS2 covers the first insulation layer IS1and the control electrode GE. The input electrode SE and the outputelectrode DE are on the second insulation layer IS2. The input electrodeSE and the output electrode DE contact the semiconductor pattern SPthrough a plurality of contact holes CH1 and CH2 defined in theinsulation layers IS1 and IS2, respectively. The first transistor T1 maybe changed into a bottom gate structure.

The third insulation layer IS3 covering the first thin film transistorT1 is on the second insulation layer IS2. The third insulation layer 3may provide a polarization surface.

The organic light emitting diode OLED and a pixel defining layer PDL areon the third insulation layer IS3, which may include a contact hole CH3through which the first electrode EL1 contacts the output electrode DE.The pixel defining layer PDL may include an organic material. An openingOP of the pixel defining layer PDL exposes at least a portion of thefirst electrode EL1. The opening OP of the pixel defining layer PDL maydefine an emission area Pxa of the pixel. In an embodiment, the pixeldefining layer PDL may be omitted.

In an embodiment, the emission area Pxa may overlap at least one of thefirst or second transistor T1 or T2. The opening OP may be widened, andthe first electrode EL1 may be further widened.

The first electrode EL1 is on the third insulation layer IS3. The firstelectrode EL1 may be made of a metal alloy or a conductive compound. Thefirst electrode EL1 may be an anode. The first electrode ELI may be atransmissive electrode, a transflective electrode, or a reflectiveelectrode.

A hole transport region HTR is provided on the first electrode EL1. Thehole transport region HTR may include at least one of a hole injectionlayer, a hole transport layer, a hole buffer layer, or an electronblocking layer.

The hole transport region HTR may have a single layer made of a singlematerial, a single layer made of materials different from each other, ora multi-layered structure including a plurality of layers made ofmaterials different from each other.

For example, the hole transport region HTR may have a single layerstructure of the hole injection layer or the hole transport layer andalso a single layer structure made of a hole injection material or ahole transport material. Also, the hole transport region HTR may have asingle layer structure formed of a plurality of different materials or astructure of the hole injection layer/the hole transport layer, the holeinjection layer/the hole transport layer/the buffer layer, the holeinjection layer/the hole buffer layer, the hole transport layer/the holebuffer layer, or the hole injection layer/the hole transport layer/theelectron blocking layer, which are successively laminated from the firstelectrode EL1, but is not limited thereto.

As described above, the hole transport region HTR according to anembodiment may further include at least one of the hole buffer layer orthe electron blocking layer in addition to the hole injection layer andthe hole transport layer, but is not limited thereto.

The light emitting layer EML may be on the hole transport region HTR.The light emitting layer EML may have a thickness of, for example, about100 Å to about 300 Å. The light emitting layer EML may have a singlelayer structure formed of a single material, a single layer structureformed of materials different from each other, or a multi-layeredstructure including a plurality of layers formed of materials differentfrom each other.

The light emitting layer EML may include a fluorescent light emittingmaterial or a phosphorescent light emitting material. In an embodiment,the light emitting layer EML may emit blue light. The light emittinglayer EML may emit a light having a wavelength region of about 410 nm toabout 480 nm (e.g., a wavelength in a range of about 410 nm to about 480nm).

The electron transport region ETR may be provided on the light emittinglayer EML. The electron transport region ETR may include at least one ofan hole blocking layer, an electron transport layer, or an electroninjection layer, but is not limited thereto.

The electron transport region ETR may have a single layer made of asingle material, a single layer made of materials different from eachother, or a multi-layered structure including a plurality of layers madeof materials different from each other. For example, the electrontransport region ETR may have a single layer structure of the electroninjection layer or the electron transport layer and also a single layerstructure made of an electron injection material or an electrontransport material. Also, the electron transport region ETR may have asingle layer structure made of a plurality of materials different fromeach other or a structure of the electron transport layer/the electroninjection layer or the hole blocking layer/the electrode transportlayer/the electrode injection layer, which are sequentially laminatedfrom the light emitting layer EML, but is not limited thereto.

The second electrode EL2 may be on the electron transport region HTR.The second electrode EL2 may have conductivity. The second electrode EL2may be made of a metal alloy or a conductive compound. The secondelectrode EL2 may be a cathode. The second electrode EL2 may be atransmissive electrode, a transflective electrode, or a reflectiveelectrode.

In some embodiments, the second electrode EL may be coupled to (e.g.,connected to) an auxiliary electrode. When the second electrode EL2 iscoupled to (e.g., connected to) the auxiliary electrode, the secondelectrode EL2 may be reduced in resistance.

The encapsulation member TFE may be on the second electrode EL2. Theencapsulation member TFE may be commonly located on the pixel areasPxa-B, Pxa-G, and Pxa-R and the peripheral area NPxa. The encapsulationmember TFE may directly cover the second electrode EL2. Theencapsulation member TFE may include at least one inorganic layer andfurther include an organic layer. In some embodiments, the encapsulationmember TFE may have a structure in which the inorganic layer and theorganic layer are alternately repeated. In an embodiment, theencapsulation member TFE may include the inorganic layer IL at theoutermost portion thereof.

FIG. 8 is a cross-sectional view of the display device according to anembodiment of the present disclosure. FIG. 9 is a plan view of thedisplay device according to an embodiment of the present disclosure.FIG. 10 is a cross-sectional view taken along line II-II′ of FIG. 9.

In FIGS. 8 and 10, the organic light emitting diode OLED and theencapsulation member TFE are schematically illustrated when compared toFIG. 3. Hereinafter, duplicative descriptions of features alreadydescribed with reference to FIGS. 1-7 may not be repeated.

Referring to a display device DD-1 of FIG. 8, in the color conversionlayer CCL, the first to third color conversion parts CCP1, CCP2, andCCP3 may have thicknesses different from each other.

In an embodiment, in the plane defined by the axis in the firstdirection DR1 and the axis in the third direction DR3, a thickness H maybe defined as a length measured in the third direction DR3. Here, athickness of the first color conversion part CCP1 may be defined as H1′,a thickness of the second color conversion part CCP2 may be defined asH2′, and a thickness of the third color conversion part CCP3 may bedefined as H3′. Also, a thickness from the interface between theencapsulation member TFE and the buffer layer BFL to the first colorconversion part CCP1 may be defined as H1, a thickness from theinterface between the encapsulation member TFE and the buffer layer BFLto the second color conversion part CCP2 may be defined as H2, and athickness from the interface between the encapsulation member TFE andthe buffer layer BFL to the third color conversion part CCP3 may bedefined as H3.

The thickness H2′ of the second color conversion part CCP2 may begreater than each of the thickness H1′ of the first color conversionpart CCP1 and the thickness H3′ of the third color conversion part CCP3,and the thickness H3′ of the third color conversion part CCP3 may begreater than the thickness H1′ of the first color conversion part CCP1.For example, the following equation may be satisfied: H2′>H3′>H1′. Thus,the thicknesses from the interface between the encapsulation member TFEand the buffer layer BFL to the color conversion part CCP may havevalues that satisfy the following equation: H1>H3>H2.

As the color conversion part CCP increases in thickness, a larger amountof light emitting bodies may be provided to improve the light conversionrate. The second color conversion part CCP2 may have a relatively lowlight conversion rate for converting the first color light into thesecond color light. Thus, the second color conversion part CCP2 may havea thickness greater than that of each of the first color conversion partCCP1 and the third color conversion part CCP3. Because the first colorconversion part CCP1 transmits the first color light, the first colorconversion part CCP1 may have the smallest thickness.

Referring to FIGS. 9-10, in the color conversion layer CCL, the first tothird color conversion parts CCP1, CCP2, and CCP3 may have areasdifferent from each other.

Referring to FIG. 9, in the plane defined by the axis in the firstdirection DR1 and the axis in the second direction DR2, the first pixelarea Pxa-B, the second pixel area Rxa-G, and the third pixel area Rxa-Rmay have areas different from each other. The fact that the areas of thefirst pixel area Rxa-B, the second pixel area Rxa-G, and the third pixelarea Rxa-R are different from each other means that the first electrodeEL1 of the organic light emitting diode OLED, the color conversion partCCP, and the like have areas different from each other.

In an embodiment, the second pixel area Rxa-G may have an area greaterthan that of each of the first pixel area Rxa-B and the third pixel areaRxa-R, and the third pixel area Rxa-R may have an area greater than thatof the first pixel area Rxa-B.

Referring to FIG. 10, in the plane defined by the axis in the firstdirection DR1 and the axis in the third direction DR3, when the first tothird color conversion parts CCP1, CCP2, and CCP3 have the same (e.g.,substantially the same) thickness, an area W may be defined as a valuemeasured in the first direction DR1. Here, an area of the first colorconversion part CCP1 may be defined as W1, an area of the second colorconversion part CCP2 may be defined as W2, and an area of the thirdcolor conversion part CCP3 may be defined as W3.

The area W2 of the second color conversion part CCP2 may be greater thaneach of the area W1 of the first color conversion part CCP1 and the areaW3 of the third color conversion part CCP3, and the area W3 of the thirdcolor conversion part CCP3 may be greater than the area W1 of the firstcolor conversion part CCP1. For example, the following equation may besatisfied: W2>W3>W1.

As the color conversion part CCP increases in area, a larger amount oflight emitting bodies may be provided to improve the light conversionrate. The second color conversion part CCP2 may have a relatively lowlight conversion rate for converting the first color light into thesecond color light. Thus, the second color conversion part CCP2 may havean area greater than that of the third color conversion part CCP3.Because the first color conversion part CCP1 transmits the first colorlight, the first color conversion part CCP1 may have the smallest area.

FIG. 11 is a cross-sectional view of a display device DD-3 according toan embodiment of the present disclosure. FIG. 12 is a cross-sectionalview of a display device DD-4 according to an embodiment of the presentdisclosure. FIG. 13 is a cross-sectional view of a display device DD-5according to an embodiment of the present disclosure. FIG. 14 is across-sectional view of a display device DD-6 according to an embodimentof the present disclosure.

In FIGS. 11-14, the organic light emitting diode OLED and theencapsulation member TFE are schematically illustrated when compared toFIG. 3. Hereinafter, duplicative descriptions of features alreadydescribed with reference to FIGS. 1-10 may not be repeated.

Referring to FIG. 11, the display device DD may further include at leastone capping layer CAP.

In an embodiment, the capping layer CAP may be between the colorconversion layer CCL and the buffer layer BFL and/or between the colorconversion layer CCL and the color filter layer CFL. In an embodiment, afirst capping layer CAP1 may be on a top surface of the color conversionlayer CCL, e.g., between the color conversion layer CCL and the bufferlayer BFL, and a second capping layer CAP2 may be between the colorconversion layer CCL and the buffer layer BFL. The capping layer CAP maybe made of an inorganic material. Here, a kind of inorganic materials isnot specifically limited. The capping layer CAP may be arranged tosurround the color conversion layer CCL and thereby to protect the colorconversion layer CCL.

Referring to FIGS. 12-13, in an embodiment, the buffer layer BFL mayinclude an uneven pattern PTN.

In an embodiment, the buffer layer BFL may have a bottom surfacecontacting the encapsulation member TFE and a top surface adjacent tothe color conversion layer CCL, the top surface having the unevenpattern PTN. The uneven pattern PTN of the buffer layer BFL may preventor reduce total reflectance of incident light to thereby improve thelight extraction efficiency.

The uneven pattern PTN is not specifically limited in shape or size.Thus, the uneven pattern PTN may have a shape or size that variesaccording to a formation method thereof. The method for forming theuneven pattern PTN is not specifically limited. For example, ananoparticle for forming an unevenness may be provided on the topsurface of the buffer layer BFL, or the buffer layer BFL may be etchedto form the uneven pattern PTN.

The internal space AR may be defined between the top surface of thebuffer layer BFL, on which the uneven pattern PTN is formed, and thecolor conversion layer CCL. The internal space AR may be in a vacuumstate, but is not limited thereto.

FIG. 13 illustrates a display device in which the first to thirdconversion parts CCP1, CCP2, and CCP3 have thicknesses different fromeach other. For example, as illustrated in FIG. 8, the thickness H2′ ofthe second color conversion part CCP2 may be greater than each of thethickness Ht of the first color conversion part CCP1 and the thicknessH3′ of the third color conversion part CCP3, and the thickness H3′ ofthe third color conversion part CCP3 may be greater than the thicknessH1′ of the first color conversion part CCP1.

In an embodiment, the top surface of the buffer layer BFL, on which theuneven pattern PTN is formed, may contact at least one of the secondconversion part CCP2 or the third conversion part CCP3. Referring toFIG. 13, the second conversion part CCP2 may have a thickness greaterthan that of each of the first and third color conversion parts CCP1 andCCP3 and contact a top surface of a second buffer layer BFL2, and theuneven pattern PTN may not be formed on the second conversion part CCP2.

An internal space AR having a height H1″ may be defined between thefirst color conversion part CCP1 and a top surface of a first bufferlayer BFL1 on which the uneven pattern PTN is formed. Also, an internalspace AR having a height H3″ may be defined between the third colorconversion part CCP1 and a top surface of a third buffer layer BFL3 onwhich the uneven pattern PTN is formed. In an embodiment, the thirdlight conversion part CCP3 may have a thickness greater than that of thefirst color conversion part CCP1, and the height H3″ from the unevenpattern PTN to the third color conversion part CCP2 may be less than theheight H1″.

Referring to FIG. 14, the display device DD may further include alow-refractive index layer LRL. In an embodiment, the low-refractiveindex layer LRL may be between the color conversion layer CCL and thecolor filter layer CFL. The low-refractive index layer LRL may totallyreflect light leaking from the color conversion layer CCL due to lowrefraction according to Snell's law to improve light efficiency throughrecycling of the light.

The display device according to the embodiment may include the bufferlayer to minimize or reduce damage to the color conversion layer.

The display device according to embodiments of the present disclosuremay include the buffer layer of which the refractive index is controlledto improve the light extraction efficiency.

As used herein, the terms “substantially,” “about,” and similar termsare used as terms of approximation and not as terms of degree, and areintended to account for the inherent deviations in measured orcalculated values that would be recognized by those of ordinary skill inthe art. Further, the use of “may” when describing embodiments of thepresent disclosure refers to “one or more embodiments of the presentdisclosure.” As used herein, the terms “use,” “using,” and “used” may beconsidered synonymous with the terms “utilize,” “utilizing,” and“utilized,” respectively. Also, the term “exemplary” is intended torefer to an example or illustration.

Also, any numerical range recited herein is intended to include allsub-ranges of the same numerical precision subsumed within the recitedrange. For example, a range of “1.0 to 10.0” is intended to include allsubranges between (and including) the recited minimum value of 1.0 andthe recited maximum value of 10.0, that is, having a minimum value equalto or greater than 1.0 and a maximum value equal to or less than 10.0,such as, for example, 2.4 to 7.6. Any maximum numerical limitationrecited herein is intended to include all lower numerical limitationssubsumed therein, and any minimum numerical limitation recited in thisspecification is intended to include all higher numerical limitationssubsumed therein. Accordingly, Applicant reserves the right to amendthis specification, including the claims, to expressly recite anysub-range subsumed within the ranges expressly recited herein.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the subject matter of thepresent disclosure. Thus, it is intended that the present disclosurecovers the modifications and variations of the disclosed subject matterprovided that they come within the scope of the appended claims andtheir equivalents.

Hence, the protective scope of the present disclosure shall bedetermined by the technical scope of the accompanying claims, andequivalents thereof.

What is claimed is:
 1. A display device comprising: a display elementconfigured to generate a first color light; an encapsulation member onthe display element and comprising an inorganic layer at an outermostportion thereof; a color conversion layer on the encapsulation memberand comprising a first color conversion part configured to transmit thefirst color light, a second color conversion part configured to convertthe first color light into a second color light, and a third colorconversion part configured to convert the first color light into a thirdcolor light; and a buffer layer between the encapsulation member and thecolor conversion layer, wherein a difference in refractive index betweenthe buffer layer and the inorganic layer is about 0.5 or less.
 2. Thedisplay device of claim 1, wherein the buffer layer is filled betweenthe encapsulation member and the color conversion layer.
 3. The displaydevice of claim 1, wherein the inorganic layer has a refractive index of1.5 to 2.5, and the buffer layer has a refractive index of 1.5 to 2.0.4. The display device of claim 1, further comprising a color filterlayer on the color conversion layer.
 5. The display device of claim 4,wherein the color filter layer comprises: a first color filter partoverlapping the first color conversion part to transmit the first colorlight; a second color filter part overlapping the second colorconversion part and configured to block the first color light andtransmit the second color light; and a third color filter partoverlapping the third color conversion part and configured to block thefirst color light and transmit the third color light.
 6. The displaydevice of claim 4, further comprising a capping layer in at least onelocation selected from between the color conversion layer and the bufferlayer, and between the color conversion layer and the color filterlayer.
 7. The display device of claim 6, wherein the buffer layercomprises: a bottom surface contacting the encapsulation member; and atop surface adjacent to the color conversion layer and comprising anuneven pattern.
 8. The display device of claim 7, wherein an internalspace is defined between the buffer layer and the color conversionlayer.
 9. The display device of claim 7, wherein the buffer layercontacts at least one of the second color conversion part or the thirdcolor conversion part.
 10. The display device of claim 1, wherein thecolor conversion layer comprises a quantum dot.
 11. The display deviceof claim 1, wherein the first color light comprises a light having awavelength region of 410 nm to 480 nm, the second color light comprisesa light having a wavelength region of 500 nm to 570 nm, and the thirdcolor light comprises a light having a wavelength region of 625 nm to675 nm.
 12. The display device of claim 4, further comprising alow-refractive index layer between the color conversion layer and thecolor filter layer, the low-refractive index layer having a refractiveindex of 1.1 to 1.5.
 13. A display device comprising: a display element;a color conversion layer on the display element and comprising first tothird color conversion parts each of which comprises a quantum dot andthat are located to be spaced apart from each other; an encapsulationmember between the display element and the color conversion layercomprising an inorganic layer contacting the color conversion layer; anda buffer layer between the encapsulation member and the color conversionlayer, the buffer layer having a refractive index of 1.5 to 2.0.
 14. Thedisplay device of claim 13, wherein the second color conversion part hasa thickness greater than each of those of the first color conversionpart and the third color conversion part, and the third color conversionpart has a thickness greater than that of the first color conversionpart in a plane.
 15. The display device of claim 13, wherein the secondcolor conversion part has an area greater than each of those of thefirst color conversion part and the third color conversion part, and thethird color conversion part has an area greater than that of the firstconversion part in a plane.
 16. The display device of claim 13, whereina difference in refractive index between the buffer layer and theinorganic layer is 0.5 or less.
 17. The display device of claim 13,further comprising: a first capping layer on a top surface of the colorconversion layer; and a second capping layer between the buffer layerand the color conversion layer.
 18. The display device of claim 17,wherein the buffer layer comprises: a bottom surface contacting theencapsulation member; and a top surface adjacent to the color conversionlayer and comprising an uneven pattern, wherein an internal space isdefined between the buffer layer and the color conversion layer.
 19. Thedisplay device of claim 18, wherein the internal space is definedbetween each of the buffer layer and the first color conversion part andbetween the buffer layer and the third color conversion part.
 20. Adisplay device comprising: a display element comprising first to thirdpixel regions adjacent to each other in a plane, the display elementcomprising a first organic light emitting diode overlapping the firstpixel region and comprising a light emitting layer, a second organiclight emitting diode overlapping the second pixel region and comprisinga light emitting layer, and a third organic light emitting diodeoverlapping the third pixel region and comprising a light emittinglayer; an encapsulation member on the display element and comprising aninorganic layer at an outermost portion thereof; a color conversionlayer on the encapsulation member and comprising a first colorconversion part located to correspond to the first organic lightemitting diode, a second color conversion part located to correspond tothe second organic light emitting diode, and a third color conversionpart located to correspond to the third organic light emitting diode; acolor filter layer on the color conversion layer; a buffer layer betweenthe encapsulation member and the color conversion layer, wherein adifference in refractive index between the buffer layer and theinorganic layer is 0.5 or less; a low-refractive index layer between thecolor conversion layer and the color filter layer; a first capping layerbetween the color conversion layer and the low-refractive index layer;and a second capping layer between the buffer layer and the colorconversion layer, wherein the light emitting layers of the first organiclight emitting diode, the second organic light emitting diode, and thethird organic light emitting diode are integrated with each other.